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検索キーワード:(著者名に左の語を含む: #HAYNES T.E.)
該当件数:22件
(ION BEAM DEPOSITION OF EPITAXIAL GERMANIUM AND GALLIUM ARSENIDE LAYERS). / HAYNES, T.E.
: Oak Ridge National Laboratory(Oak Ridge National Laboratory) , 1989. - (ORNL ; ORNL/FTR-3308)
レポート
LATTICE DAMAGE DURING ION IMPLANTATION OF SEMICONDUCTORS. / HAYNES, T.E. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))
, 1993. - (CONF ; CONF-9308122-6)
RAMAN STUDY OF "BOSON PEAK" IN ION-IMPLANTED GAAS: DEPENDENCE ON ION DOSE AND DOSE RATE / IVANDA, M.// DESNICA, U.V.// HAYNES, T.E. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))
, 1993. - (CONF ; CONF-9307124-5)
DOSE RATE EFFECTS ON DAMAGE FORMATION IN ION-IMPLANTED GALLIUM ARSENIDE / HAYNES,T.E.//HOLLAND,O.W.(OAK RIDGE NATIONAL LAB.,TN(USA))
, 1990. - (CONF ; CONF-900936-9)
DESIGN AND DEVELOPMENT OF A FLANGE DEWATERING DEVICE
: Oak Ridge National Lab. , 1958. - (CF ; CF-58-1-42)
Crystallization and related phenomena in amorphous materials; Symposium. (Materials Research Society symposium proceedings, V.321) / Libera, M.(ed.)/Haynes, T.E.(ed.)/and others
Pittsburgh, Pa. : MRS , 1994
図書
DEPOSITION OF HETERO-EPITAXIAL IN/SUB 2/O/SUB 3/ THIN FILMS BY MOLECULAR BEAM EPITAXY / TAGA, N.// MAEKAWA, M.// SHIGESATO, Y.// YASUI, I.// HAYNES, T.E. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))
, 1996. - (CONF ; CONF-9605188-2)
ION IMPLANTATION AND DYNAMIC RECOVERY OF TIN-DOPED INDIUM OXIDE FILMS / SHIGESATO, YUZO// PAINE, D.C.// HAYNES, T.E. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES)// NATIONAL SCIENCE FOUNDATION, WASHINGTON, DC (UNITED STATES)// OFFICE OF NAVAL RESEARCH, WASHINGTON, DC (UNITED STATES))
, 1993. - (CONF ; CONF-9308122-14)
GROWTH OF EPITAXICAL SIC LAYERS ONTO ON- AND OFF-AXIS 6H-SIC SUBSTRATES BY ION BEAM DEPOSITION / MORE, K.L.//WITHROW, S.P.// HAYNES, T.E.//ZUHR, R.A
, 1989. - (CONF ; CONF-891119-39)
LATTICE DAMAGE IN ION-IMPLANTED COMPOUND SEMICONDUCTORS AND ITS EFFECT ON ELECTRICAL ACTIVATION / HAYNES, T.E.// MORTON, R.// LAU, S.S. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))
, 1993. - (CONF ; CONF-930405-1)
Effectiveness of thin film encapsulants for reducing evaporation during rapid thermal processing of GaAs / Haynes, T.E., Picraux, S.T., Chu, W.K.
Chapel Hill (USA), Albuquerque, NM (USA) : North Carolina Univ., Dept. of Physics and Astronomy; Sandia National Labs. , 1986.01. - (Sandia report ; SAND-86-1409C; CONF-861207-37; DE87003513)
LATTICE DAMAGE IN ION-IMPLANTED SILICON-GERMANIUM ALLOYS / HAYNES, T.E.// HOLLAND, O.W. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))
, 1992. - (CONF ; CONF-9209200-1)
Ion beam modification of film stress and the effectiveness of thin film encapsulants on GaAs / Haynes, T.E., Picraux, S.T., Lee, S.R. [et al.]
Chapel Hill (USA), Albuquerque, NM (USA) : North Carolina Univ., Sandia National Labs. , 1987.1. - (SAND ; SAND-87-2870C; CONF-871124-49; DE88004458)
EFFICIENCY OF FUEL SYSTEM ENTRAINMENT SEPARATOR DURING NORMAL OPERATION. HRT REPORT 11 A (7C)B. WORK PERIOD: SEPTEMBER 27, 1955-NOVEMBER 25, 1955
: Oak Ridge National Lab. , 1956. - (CF ; CF-56-5-167)
(311) DEFECTS IN ION-IMPLANTED SILICON: THE CAUSE OF TRANSIENT DIFFUSION, AND A MECHANISM FOR DISLOCATION FORMATION / EAGLESHAM, D.J.// STOLK, P.A.// CHENG, J.Y.// GOSSMANN, H.J.// POATE, J.M.// HAYNES, T.E. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES)// AT AND T BELL LABS., MURRAY HILL, NJ (UNITED STATES))
, 1995. - (CONF ; CONF-9503125-4)
Thermal stability of TaSi/sub x/-GaAs Schottky barriers in rapid thermal processing / Haynes, T.E., Han, C.C., Lau, S.S. [et al.]
Chapel Hill, NC (USA), San Diego, CA (USA), Albuquerque, NM (USA) : North Carolina Univ., California Univ., Sandia National Labs. , 1987.1. - (SAND ; SAND-87-0982C; CONF-870438-4; DE87008508)
ION BEAM DEPOSITION OF EPITAXIAL GERMANIUM AND GALLIUM ARSENIDE LAYERS / HAYNES, T.E.// ZUHR, R.A.// PENNYCOOK, S.J.// LARSON, B.C. (OAK RIDGE NATIONAL LAB., TN (USA))
, 1989. - (CONF ; CONF-8906157-1)
RAMAN STUDY OF DAMAGE PROCESSES IN SI/SUP +/-IMPLANTED GAAS / IVANDA, M.// DESNICA, U.V.// HAYNES, T.E.// HARTMANN, I.// KIEFER, W. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))
, 1994. - (CONF ; CONF-940903-1)
DEFECTS AND DIFFUSION IN SI/SUP +/ IMPLANTED GAAS / JONES, K.S.// ROBINSON, H.G.// HAYNES, T.E.// DEAL, M.D.// LEE, C.C.// ALLEN, E.L. (OAK RIDGE NATIONAL LAB., TN (UNITED STATES))
, 1993. - (CONF ; CONF-930405-57)
FORMATION OF ALUMINUM FILMS ON SILICON BY ION BEAM DEPOSITION: A COMPARISON WITH IONIZED CLUSTER BEAM DEPOSITION / ZUHR, R.A.// HAYNES, T.E.// GALLOWAY, M.D.// TANAKA, S.// YAMADA, A.// YAMADA, I. (OAK RIDGE NATIONAL LAB., TN (USA))
, 1990. - (CONF ; CONF-900936-12)